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Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Operating Temperature Package / Case Input Type Output Type Current - Output / Channel Rise / Fall Time (Typ) Voltage - Output (Max) Voltage - Isolation Voltage - Forward (Vf) (Typ) Current - DC Forward (If) (Max) Current Transfer Ratio (Min) Turn On / Turn Off Time (Typ) Vce Saturation (Max)
4N35
Lite-On Inc.
44,064
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 3.55KV TRANS W/BASE 6DIP
-55°C ~ 100°C 6-DIP (0.300",7.62mm) DC Transistor with Base 100mA 3μs,3μs 30V 3550Vrms 1.2V 60mA 100% @ 10mA - 300mV
4N25
Lite-On Inc.
30,375
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 2.5KV TRANS W/BASE 6DIP
-55°C ~ 100°C 6-DIP (0.300",7.62mm) DC Transistor with Base 100mA 3μs,3μs 30V 2500Vrms 1.2V 80mA 20% @ 10mA - 500mV
4N33M
ON Semiconductor
29,295
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV DARL W/BASE 6DIP
-40°C ~ 100°C 6-DIP (0.300",7.62mm) DC Darlington with Base 150mA - 30V 4170Vrms 1.2V 80mA 500% @ 10mA 5μs,100μs (Max) 1V
4N37
Lite-On Inc.
10,953
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 1.5KV TRANS W/BASE 6DIP
-55°C ~ 100°C 6-DIP (0.300",7.62mm) DC Transistor with Base 100mA 3μs,3μs 30V 1500Vrms 1.2V 60mA 100% @ 10mA - 300mV
4N26
Lite-On Inc.
10,228
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 1.5KV TRANS W/BASE 6DIP
-55°C ~ 100°C 6-DIP (0.300",7.62mm) DC Transistor with Base 100mA 3μs,3μs 30V 1500Vrms 1.2V 80mA 20% @ 10mA - 500mV
4N35
Vishay Semiconductor Opto Division
6,933
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 5KV TRANS W/BASE 6DIP
-55°C ~ 100°C 6-DIP (0.300",7.62mm) DC Transistor with Base 50mA - 70V 5000Vrms 1.3V 50mA 100% @ 10mA 10μs,10μs -
4N25
Vishay Semiconductor Opto Division
6,448
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 5KV TRANS W/BASE 6DIP
-55°C ~ 100°C 6-DIP (0.300",7.62mm) DC Transistor with Base 50mA 2μs,2μs 70V 5000Vrms 1.3V 60mA 20% @ 10mA - 500mV
4N36
Vishay Semiconductor Opto Division
5,182
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 5KV TRANS W/BASE 6DIP
-55°C ~ 100°C 6-DIP (0.300",7.62mm) DC Transistor with Base 50mA - 30V 5000Vrms 1.3V 50mA 100% @ 10mA 10μs,10μs -
4N26
Vishay Semiconductor Opto Division
1,998
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 5KV TRANS W/BASE 6DIP
-55°C ~ 100°C 6-DIP (0.300",7.62mm) DC Transistor with Base 50mA 2μs,2μs 70V 5000Vrms 1.3V 60mA 20% @ 10mA - 500mV
4N37
Vishay Semiconductor Opto Division
1,854
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 5KV TRANS W/BASE 6DIP
-55°C ~ 100°C 6-DIP (0.300",7.62mm) DC Transistor with Base 50mA - 30V 5000Vrms 1.3V 50mA 100% @ 10mA 10μs,10μs -
4N27
Vishay Semiconductor Opto Division
1,415
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 5KV TRANS W/BASE 6DIP
-55°C ~ 100°C 6-DIP (0.300",7.62mm) DC Transistor with Base 50mA 2μs,2μs 70V 5000Vrms 1.3V 60mA 10% @ 10mA - 500mV
4N32
Vishay Semiconductor Opto Division
5,419
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 5.3KV DARL W/BASE 6DIP
-55°C ~ 100°C 6-DIP (0.300",7.62mm) DC Darlington with Base 100mA - 30V 5300Vrms 1.25V 60mA 500% @ 10mA 5μs,100μs (Max) 1V (Typ)
4N33
Vishay Semiconductor Opto Division
1,773
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 5.3KV DARL W/BASE 6DIP
-55°C ~ 100°C 6-DIP (0.300",7.62mm) DC Darlington with Base 100mA - 30V 5300Vrms 1.25V 60mA 500% @ 10mA 5μs,100μs (Max) 1V (Typ)
4N25M
ON Semiconductor
11,124
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C 6-DIP (0.300",7.62mm) DC Transistor with Base - - 30V 4170Vrms 1.18V 60mA 20% @ 10mA 2μs,2μs 500mV
4N37M
ON Semiconductor
9,143
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C 6-DIP (0.300",7.62mm) DC Transistor with Base - - 30V 4170Vrms 1.18V 60mA 100% @ 10mA 2μs,2μs 300mV
4N35M
ON Semiconductor
4,993
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C 6-DIP (0.300",7.62mm) DC Transistor with Base - - 30V 4170Vrms 1.18V 60mA 100% @ 10mA 2μs,2μs 300mV
4N26M
ON Semiconductor
4,560
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C 6-DIP (0.300",7.62mm) DC Transistor with Base - - 30V 4170Vrms 1.18V 60mA 20% @ 10mA 2μs,2μs 500mV
4N36M
ON Semiconductor
3,191
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C 6-DIP (0.300",7.62mm) DC Transistor with Base - - 30V 4170Vrms 1.18V 60mA 100% @ 10mA 2μs,2μs 300mV
MCT2EM
ON Semiconductor
7,759
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 7.5KV TRANS W/BASE 6DIP
-40°C ~ 100°C 6-DIP (0.300",7.62mm) DC Transistor with Base 50mA 2μs,1.5μs 30V 7500Vpk 1.25V 60mA 20% @ 10mA 2μs,2μs 400mV
4N29M
ON Semiconductor
5,155
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV DARL W/BASE 6DIP
-40°C ~ 100°C 6-DIP (0.300",7.62mm) DC Darlington with Base 150mA - 30V 4170Vrms 1.2V 80mA 100% @ 10mA 5μs,40μs (Max) 1V