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- Packaging:
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- Operating Temperature:
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- Current Transfer Ratio (Min):
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- Current Transfer Ratio (Max):
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Discover 172 products
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Input Type | Output Type | Current - Output / Channel | Rise / Fall Time (Typ) | Voltage - Output (Max) | Voltage - Isolation | Voltage - Forward (Vf) (Typ) | Current Transfer Ratio (Min) | Current Transfer Ratio (Max) | Turn On / Turn Off Time (Typ) | Vce Saturation (Max) | ||
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Input Type | Output Type | Current - Output / Channel | Rise / Fall Time (Typ) | Voltage - Output (Max) | Voltage - Isolation | Voltage - Forward (Vf) (Typ) | Current Transfer Ratio (Min) | Current Transfer Ratio (Max) | Turn On / Turn Off Time (Typ) | Vce Saturation (Max) | ||
Toshiba Semiconductor and Storage |
7,993
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISOLATR 5KV TRANSISTOR 4-DIP
|
Tube | - | -55°C ~ 100°C | AC,DC | Transistor | 50mA | 8μs,8μs | 55V | 5000Vrms | 1.15V | 200% @ 1mA | 1200% @ 1mA | 10μs,8μs | 400mV | ||||
Vishay Semiconductor Opto Division |
8,436
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISOLATR 5KV TRANSISTOR 4-DIP
|
Tube | - | -55°C ~ 110°C | DC | Transistor | 50mA | 3μs,4.7μs | 70V | 5000Vrms | 1.43V | 200% @ 5mA | 400% @ 5mA | 6μs,5μs | 300mV | ||||
Vishay Semiconductor Opto Division |
4,554
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISOLATOR 5.3KV TRANS 4-DIP
|
Tube | - | -55°C ~ 110°C | DC | Transistor | 50mA | 2μs,2μs | 80V | 5300Vrms | 1.1V | 100% @ 1mA | 200% @ 1mA | 3μs,2.3μs | 400mV | ||||
Vishay Semiconductor Opto Division |
15,579
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISOLATOR 5.3KV TRANS 4-DIP
|
Tube | - | -55°C ~ 100°C | DC | Transistor | 50mA | 2μs,2μs | 70V | 5300Vrms | 1.35V | 100% @ 10mA | 200% @ 10mA | 3μs,2.3μs | 400mV | ||||
Vishay Semiconductor Opto Division |
4,794
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISOLATOR 5.3KV TRANS 4-DIP
|
Tube | - | -55°C ~ 100°C | DC | Transistor | 50mA | 2μs,2μs | 70V | 5300Vrms | 1.35V | 160% @ 10mA | 320% @ 10mA | 3μs,2.3μs | 400mV | ||||
Vishay Semiconductor Opto Division |
3,820
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISOLATOR 5.3KV TRANS 4-DIP
|
Tube | - | -55°C ~ 100°C | DC | Transistor | 50mA | 2μs,2μs | 70V | 5300Vrms | 1.35V | 63% @ 10mA | 125% @ 10mA | 3μs,2.3μs | 400mV | ||||
Vishay Semiconductor Opto Division |
1,846
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISOLATOR 5.3KV TRANS 4-DIP
|
Tube | - | -55°C ~ 100°C | AC,DC | Transistor | 50mA | 2μs,2μs | 70V | 5300Vrms | 1.25V | 100% @ 10mA | 320% @ 10mA | 3μs,2.3μs | 400mV | ||||
Vishay Semiconductor Opto Division |
1,341
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISOLATOR 5.3KV TRANS 4-DIP
|
Tube | - | -55°C ~ 100°C | AC,DC | Transistor | 50mA | 2μs,2μs | 70V | 5300Vrms | 1.25V | 63% @ 10mA | 200% @ 10mA | 3μs,2.3μs | 400mV | ||||
Vishay Semiconductor Opto Division |
2,833
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISOLATOR 5.3KV TRANS 4-DIP
|
Tube | - | -55°C ~ 100°C | DC | Transistor | 50mA | 2μs,2μs | 70V | 5300Vrms | 1.25V | 100% @ 10mA | 200% @ 10mA | 3μs,2.3μs | 400mV | ||||
Vishay Semiconductor Opto Division |
3,986
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISOLATOR 5.3KV TRANS 4-DIP
|
Tube | - | -55°C ~ 100°C | DC | Transistor | 50mA | 3.5μs,5μs | 55V | 5300Vrms | 1.1V | 250% @ 1mA | 500% @ 1mA | 6μs,5.5μs | 400mV | ||||
Vishay Semiconductor Opto Division |
3,089
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISOLATOR 5.3KV DARL 4DIP
|
Tube | - | -55°C ~ 100°C | DC | Darlington | 125mA | 3.5μs,14.5μs | 300V | 5300Vrms | 1.2V | 1000% @ 1mA | - | 4.5μs,29μs | 1.2V | ||||
Toshiba Semiconductor and Storage |
2,494
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISOLATR 5KV TRANSISTOR 4-DIP
|
Tube | - | -55°C ~ 100°C | AC,DC | Transistor | 50mA | 8μs,8μs | 55V | 5000Vrms | 1.15V | 100% @ 1mA | 1200% @ 1mA | 10μs,8μs | 400mV | ||||
Vishay Semiconductor Opto Division |
3,531
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISOLATR 5KV TRANSISTOR 4-DIP
|
Tube | - | -40°C ~ 100°C | DC | Transistor | 50mA | 3μs,4.7μs | 70V | 5000Vrms | 1.25V | 100% @ 10mA | 200% @ 10mA | 6μs,5μs | 300mV | ||||
Vishay Semiconductor Opto Division |
5,743
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 5KV TRANSISTOR 4DIP
|
Tube | - | -40°C ~ 100°C | AC,DC | Transistor | 50mA | 3μs,4.7μs | 70V | 5000Vrms | 1.25V | 20% @ 5mA | 300% @ 5mA | 6μs,5μs | 300mV | ||||
Vishay Semiconductor Opto Division |
2,581
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISOLATOR 5.3KV TRANS 4-DIP
|
Tube | - | -55°C ~ 110°C | DC | Transistor | 50mA | 2μs,2μs | 80V | 5300Vrms | 1.35V | 63% @ 5mA | 125% @ 5mA | 3μs,2.3μs | 400mV | ||||
Vishay Semiconductor Opto Division |
1,018
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISOLATOR 5.3KV TRANS 4-DIP
|
Tube | - | -55°C ~ 110°C | DC | Transistor | 50mA | 2μs,2μs | 80V | 5300Vrms | 1.35V | 160% @ 5mA | 320% @ 5mA | 3μs,2.3μs | 400mV | ||||
Vishay Semiconductor Opto Division |
4,555
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISOLATOR 5.3KV TRANS 4-DIP
|
Tube | - | -55°C ~ 110°C | DC | Transistor | 50mA | 2μs,2μs | 80V | 5300Vrms | 1.1V | 50% @ 1mA | 600% @ 1mA | 3μs,2.3μs | 400mV | ||||
Vishay Semiconductor Opto Division |
1,998
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISOLATOR 5.3KV TRANS 4DIP
|
Tube | - | -55°C ~ 110°C | DC | Transistor | 50mA | 2μs,2μs | 70V | 5300Vrms | 1.35V | 160% @ 10mA | 320% @ 10mA | 3μs,2.3μs | 400mV | ||||
Vishay Semiconductor Opto Division |
4,036
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISOLATOR 5.3KV TRANS 4-DIP
|
Tube | - | -55°C ~ 100°C | DC | Transistor | 50mA | 2μs,2μs | 70V | 5300Vrms | 1.25V | 63% @ 10mA | 125% @ 10mA | 3μs,2.3μs | 400mV | ||||
Vishay Semiconductor Opto Division |
1,810
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISOLATOR 5.3KV TRANS 4-DIP
|
Tube | - | -55°C ~ 100°C | DC | Transistor | 50mA | 2μs,2μs | 70V | 5300Vrms | 1.25V | 160% @ 10mA | 320% @ 10mA | 3μs,2.3μs | 400mV |