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- Current - Output / Channel：
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- Rise / Fall Time (Typ)：
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- Voltage - Output (Max)：
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- Voltage - Isolation：
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- Voltage - Forward (Vf) (Typ)：
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- Current - DC Forward (If) (Max)：
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- Current Transfer Ratio (Min)：
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- Current Transfer Ratio (Max)：
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- Turn On / Turn Off Time (Typ)：
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- Vce Saturation (Max)：
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Discover 295 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Operating Temperature | Mounting Type | Input Type | Output Type | Current - Output / Channel | Rise / Fall Time (Typ) | Voltage - Output (Max) | Voltage - Isolation | Voltage - Forward (Vf) (Typ) | Current - DC Forward (If) (Max) | Current Transfer Ratio (Min) | Current Transfer Ratio (Max) | Turn On / Turn Off Time (Typ) | Vce Saturation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Operating Temperature | Mounting Type | Input Type | Output Type | Current - Output / Channel | Rise / Fall Time (Typ) | Voltage - Output (Max) | Voltage - Isolation | Voltage - Forward (Vf) (Typ) | Current - DC Forward (If) (Max) | Current Transfer Ratio (Min) | Current Transfer Ratio (Max) | Turn On / Turn Off Time (Typ) | Vce Saturation (Max) | |
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ON Semiconductor |
29,295
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV DARL W/BASE 6DIP
|
-40°C ~ 100°C | Through Hole | DC | Darlington with Base | 150mA | - | 30V | 4170Vrms | 1.2V | 80mA | 500% @ 10mA | - | 5μs，100μs (Max) | 1V | ||
|
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|
ON Semiconductor |
11,124
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV TRANS W/BASE 6DIP
|
-40°C ~ 100°C | Through Hole | DC | Transistor with Base | - | - | 30V | 4170Vrms | 1.18V | 60mA | 20% @ 10mA | - | 2μs，2μs | 500mV | ||
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|
|
ON Semiconductor |
9,143
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV TRANS W/BASE 6DIP
|
-40°C ~ 100°C | Through Hole | DC | Transistor with Base | - | - | 30V | 4170Vrms | 1.18V | 60mA | 100% @ 10mA | - | 2μs，2μs | 300mV | ||
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|
ON Semiconductor |
4,993
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV TRANS W/BASE 6DIP
|
-40°C ~ 100°C | Through Hole | DC | Transistor with Base | - | - | 30V | 4170Vrms | 1.18V | 60mA | 100% @ 10mA | - | 2μs，2μs | 300mV | ||
|
|
|
ON Semiconductor |
4,560
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV TRANS W/BASE 6DIP
|
-40°C ~ 100°C | Through Hole | DC | Transistor with Base | - | - | 30V | 4170Vrms | 1.18V | 60mA | 20% @ 10mA | - | 2μs，2μs | 500mV | ||
|
|
|
ON Semiconductor |
3,191
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV TRANS W/BASE 6DIP
|
-40°C ~ 100°C | Through Hole | DC | Transistor with Base | - | - | 30V | 4170Vrms | 1.18V | 60mA | 100% @ 10mA | - | 2μs，2μs | 300mV | ||
|
|
|
ON Semiconductor |
3,140
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV TRANS W/BASE 6DIP
|
-40°C ~ 100°C | Through Hole | DC | Transistor with Base | 50mA | 4μs，3.5μs (Max) | 70V | 4170Vrms | 1.35V | 60mA | 100% @ 10mA | 200% @ 10mA | 2μs，3μs | 400mV | ||
|
|
|
ON Semiconductor |
7,759
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 7.5KV TRANS W/BASE 6DIP
|
-40°C ~ 100°C | Through Hole | DC | Transistor with Base | 50mA | 2μs，1.5μs | 30V | 7500Vpk | 1.25V | 60mA | 20% @ 10mA | - | 2μs，2μs | 400mV | ||
|
|
|
ON Semiconductor |
5,155
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV DARL W/BASE 6DIP
|
-40°C ~ 100°C | Through Hole | DC | Darlington with Base | 150mA | - | 30V | 4170Vrms | 1.2V | 80mA | 100% @ 10mA | - | 5μs，40μs (Max) | 1V | ||
|
|
|
ON Semiconductor |
3,995
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV DARL W/BASE 6DIP
|
-40°C ~ 100°C | Through Hole | DC | Darlington with Base | 150mA | - | 30V | 4170Vrms | 1.2V | 80mA | 500% @ 10mA | - | 5μs，100μs (Max) | 1V | ||
|
|
|
ON Semiconductor |
1,832
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV DARL W/BASE 6DIP
|
-40°C ~ 100°C | Through Hole | DC | Darlington with Base | 150mA | - | 30V | 4170Vrms | 1.2V | 80mA | 100% @ 10mA | - | 5μs，40μs (Max) | 1V | ||
|
|
|
ON Semiconductor |
1,396
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 7.5KV TRANS W/BASE 6DIP
|
-40°C ~ 100°C | Through Hole | DC | Transistor with Base | 2mA | 10μs，10μs (Max) | 30V | 7500Vpk | 1.2V | 60mA | - | - | - | 400mV | ||
|
|
|
ON Semiconductor |
10,112
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV DARLINGTON 6DIP
|
-40°C ~ 100°C | Through Hole | DC | Darlington | 150mA | - | 80V | 4170Vrms | 1.18V | 60mA | 500% @ 10mA | - | 8.5μs，95μs | - | ||
|
|
|
ON Semiconductor |
9,528
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV DARLINGTON 6DIP
|
-40°C ~ 100°C | Through Hole | DC | Darlington | 150mA | - | 50V | 4170Vrms | 1.18V | 60mA | 1000% @ 10mA | - | 8.5μs，95μs | - | ||
|
|
|
ON Semiconductor |
3,550
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV TRANS W/BASE 6DIP
|
-40°C ~ 100°C | Through Hole | AC，DC | Transistor with Base | 50mA | - | 30V | 4170Vrms | 1.17V | 60mA | 20% @ 10mA | - | - | 400mV | ||
|
|
|
ON Semiconductor |
2,836
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV TRANS W/BASE 6DIP
|
-40°C ~ 100°C | Through Hole | AC，DC | Transistor with Base | 50mA | - | 30V | 4170Vrms | 1.17V | 60mA | 100% @ 10mA | - | - | 400mV | ||
|
|
|
ON Semiconductor |
7,871
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV DARL W/BASE 6DIP
|
-40°C ~ 100°C | Through Hole | DC | Darlington with Base | - | - | 100V | 4170Vrms | 1.3V | 60mA | 1000% @ 10mA | - | - | 1V | ||
|
|
|
ON Semiconductor |
3,189
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV DARL W/BASE 6DIP
|
-40°C ~ 100°C | Through Hole | DC | Darlington with Base | - | - | 80V | 4170Vrms | 1.3V | 60mA | 1000% @ 10mA | - | 5μs，100μs | 1V | ||
|
|
|
ON Semiconductor |
2,938
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISOLTR 7.5KV PHOTO FET 6-DIP
|
-40°C ~ 100°C | Through Hole | DC | MOSFET | - | - | 15V | 7500Vpk | 1.3V | 60mA | - | - | 45μs，45μs (Max) | - | ||
|
|
|
ON Semiconductor |
2,013
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISOLTR 7.5KV PHOTO FET 6-DIP
|
-40°C ~ 100°C | Through Hole | DC | MOSFET | - | - | 30V | 7500Vpk | 1.3V | 60mA | - | - | 45μs，45μs (Max) | - |
