Input Type:
Current - DC Forward (If) (Max):
Discover 439 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Operating Temperature Input Type Output Type Current - Output / Channel Rise / Fall Time (Typ) Voltage - Output (Max) Voltage - Isolation Voltage - Forward (Vf) (Typ) Current - DC Forward (If) (Max) Current Transfer Ratio (Min) Current Transfer Ratio (Max) Turn On / Turn Off Time (Typ) Vce Saturation (Max)
4N35TVM
ON Semiconductor
3,612
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C DC Transistor with Base - - 30V 4170Vrms 1.18V 60mA 100% @ 10mA - 2μs,2μs 300mV
CNY17F2TVM
ON Semiconductor
2,244
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS 6DIP
-40°C ~ 100°C DC Transistor 50mA 4μs,3.5μs (Max) 70V 4170Vrms 1.35V 60mA 63% @ 10mA 125% @ 10mA 2μs,3μs 400mV
TCDT1102G
Vishay Semiconductor Opto Division
2,000
3 days
-
MOQ: 1  MPQ: 1
OPTOISOLATOR 5KV TRANS 6DIP
-55°C ~ 110°C DC Transistor 50mA 7μs,6.7μs 32V 5000Vrms 1.25V 60mA 63% @ 10mA 125% @ 10mA 11μs,7μs 300mV
CNY173TVM
ON Semiconductor
2,853
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C DC Transistor with Base 50mA 4μs,3.5μs (Max) 70V 4170Vrms 1.35V 60mA 100% @ 10mA 200% @ 10mA 2μs,3μs 400mV
4N35-X006
Vishay Semiconductor Opto Division
9,249
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 5KV TRANS W/BASE 6DIP
-55°C ~ 100°C DC Transistor with Base 50mA - 30V 5000Vrms 1.2V 60mA 100% @ 10mA - 10μs,10μs -
MOC8102-X006
Vishay Semiconductor Opto Division
1,665
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 5.3KV TRANSISTOR 6DIP
-55°C ~ 100°C DC Transistor 50mA 2μs,2μs 30V 5300Vrms 1.25V 60mA 73% @ 10mA 117% @ 10mA 3μs,2.3μs 400mV
CQY80NG
Vishay Semiconductor Opto Division
2,060
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 5KV TRANS W/BASE 6DIP
-55°C ~ 100°C DC Transistor with Base 50mA 7μs,6.7μs 32V 5000Vrms 1.25V 60mA 50% @ 10mA - 11μs,7μs 300mV
TCDT1123G
Vishay Semiconductor Opto Division
1,979
3 days
-
MOQ: 1  MPQ: 1
OPTOISOLATOR 5KV TRANS 6DIP
-55°C ~ 100°C DC Transistor 50mA 4.2μs,4.7μs 70V 5000Vrms 1.25V 60mA 100% @ 10mA 200% @ 10mA 7μs,5μs 300mV
CNY17-3X006
Vishay Semiconductor Opto Division
1,716
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 5KV TRANS W/BASE 6DIP
-55°C ~ 110°C DC Transistor with Base 50mA 2μs,2μs 70V 5000Vrms 1.39V 60mA 100% @ 10mA 200% @ 10mA 3μs,2.3μs 400mV
TCDT1124G
Vishay Semiconductor Opto Division
2,000
3 days
-
MOQ: 1  MPQ: 1
OPTOISOLATOR 5KV TRANS 6DIP
-55°C ~ 100°C DC Transistor 50mA 4μs,4.7μs 70V 5000Vrms 1.25V 60mA 160% @ 10mA 320% @ 10mA 4μs,4.7μs 300mV
CNY117-2X006
Vishay Semiconductor Opto Division
14,000
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 5KV TRANS W/BASE 6DIP
-55°C ~ 110°C DC Transistor with Base 50mA 2μs,2μs 70V 5000Vrms 1.39V 60mA 63% @ 10mA 125% @ 10mA 3μs,2.3μs 400mV
4N33TVM
ON Semiconductor
1,071
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV DARL W/BASE 6DIP
-40°C ~ 100°C DC Darlington with Base 150mA - 30V 4170Vrms 1.2V 80mA 500% @ 10mA - 5μs,100μs (Max) 1V
CNY17F1TVM
ON Semiconductor
1,480
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS 6DIP
-40°C ~ 100°C DC Transistor 50mA 4μs,3.5μs (Max) 70V 4170Vrms 1.35V 60mA 40% @ 10mA 80% @ 10mA 2μs,3μs 400mV
CNY174TVM
ON Semiconductor
1,497
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C DC Transistor with Base 50mA 4μs,3.5μs (Max) 70V 4170Vrms 1.35V 60mA 160% @ 10mA 320% @ 10mA 2μs,3μs 400mV
4N38TVM
ON Semiconductor
1,023
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C DC Transistor with Base 100mA - 80V 4170Vrms 1.15V 80mA 20% @ 10mA - 5μs,5μs 1V
H11G2TVM
ON Semiconductor
2,975
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV DARL W/BASE 6DIP
-40°C ~ 100°C DC Darlington with Base - - 80V 4170Vrms 1.3V 60mA 1000% @ 10mA - 5μs,100μs 1V
CNY17F3TVM
ON Semiconductor
404
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS 6DIP
-40°C ~ 100°C DC Transistor 50mA 4μs,3.5μs (Max) 70V 4170Vrms 1.35V 60mA 100% @ 10mA 200% @ 10mA 2μs,3μs 400mV
CNY171TVM
ON Semiconductor
908
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C DC Transistor with Base 50mA 4μs,3.5μs (Max) 70V 4170Vrms 1.35V 60mA 40% @ 10mA 80% @ 10mA 2μs,3μs 400mV
CNY172TVM
ON Semiconductor
499
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C DC Transistor with Base 50mA 4μs,3.5μs (Max) 70V 4170Vrms 1.35V 60mA 63% @ 10mA 125% @ 10mA 2μs,3μs 400mV
4N25TVM
ON Semiconductor
255
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C DC Transistor with Base - - 30V 4170Vrms 1.18V 60mA 20% @ 10mA - 2μs,2μs 500mV