Optoisolators - Transistor, Photovoltaic Output - Zui Ai Technology（Taiwan）Company.

Packaging：

Number of Channels：

Operating Temperature：

Package / Case：

Supplier Device Package：

Mounting Type：

Output Type：

Current - Output / Channel：

Rise / Fall Time (Typ)：

Voltage - Output (Max)：

Voltage - Isolation：

Voltage - Forward (Vf) (Typ)：

Current - DC Forward (If) (Max)：

Current Transfer Ratio (Min)：

Current Transfer Ratio (Max)：

Turn On / Turn Off Time (Typ)：

Vce Saturation (Max)：

Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Number of Channels	Operating Temperature	Package / Case	Supplier Device Package	Mounting Type	Output Type	Current - Output / Channel	Rise / Fall Time (Typ)	Voltage - Output (Max)	Voltage - Isolation	Voltage - Forward (Vf) (Typ)	Current - DC Forward (If) (Max)	Current Transfer Ratio (Min)	Current Transfer Ratio (Max)	Turn On / Turn Off Time (Typ)	Vce Saturation (Max)
Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Number of Channels	Operating Temperature	Package / Case	Supplier Device Package	Mounting Type	Output Type	Current - Output / Channel	Rise / Fall Time (Typ)	Voltage - Output (Max)	Voltage - Isolation	Voltage - Forward (Vf) (Typ)	Current - DC Forward (If) (Max)	Current Transfer Ratio (Min)	Current Transfer Ratio (Max)	Turn On / Turn Off Time (Typ)	Vce Saturation (Max)
	TLP137(F)	Toshiba Semiconductor and Storage	17,875	3 days	-	OPTOISO 3.75KV TRANS 6-MFSOP MOQ: 1 MPQ: 1	OPTOISO 3.75KV TRANS 6-MFSOP	Tube	1	-55°C ~ 100°C	6-SOIC (0.173"，4.40mm Width)，5 Leads	6-MFSOP，5 Lead	Surface Mount	Transistor with Base	50mA	8μs，8μs	80V	3750Vrms	1.15V	50mA	100% @ 1mA	1200% @ 1mA	10μs，8μs	400mV
	TLP372(F)	Toshiba Semiconductor and Storage	3,803	3 days	-	OPTOISOLTR 5KV DARLINGTON 6-DIP MOQ: 1 MPQ: 1	OPTOISOLTR 5KV DARLINGTON 6-DIP	Tube	1	-55°C ~ 100°C	6-DIP (0.300"，7.62mm)	6-DIP	Through Hole	Darlington	150mA	40μs，15μs	300V	5000Vrms	1.15V	60mA	1000% @ 1mA	-	50μs，15μs	1.2V
	4N25(SHORT,F)	Toshiba Semiconductor and Storage	3,026	3 days	-	OPTOISO 2.5KV TRANS W/BASE 6DIP MOQ: 1 MPQ: 1	OPTOISO 2.5KV TRANS W/BASE 6DIP	Tube	1	-55°C ~ 100°C	6-DIP (0.300"，7.62mm)	6-DIP	Through Hole	Transistor with Base	100mA	2μs，200μs	30V	2500Vrms	1.15V	80mA	20% @ 10mA	-	-	500mV
	4N35(SHORT,F)	Toshiba Semiconductor and Storage	573	3 days	-	OPTOISO 2.5KV TRANS W/BASE 6DIP MOQ: 1 MPQ: 1	OPTOISO 2.5KV TRANS W/BASE 6DIP	Tube	1	-55°C ~ 100°C	6-DIP (0.300"，7.62mm)	6-DIP	Through Hole	Transistor with Base	100mA	-	30V	2500Vrms	1.15V	60mA	40% @ 10mA	-	3μs，3μs	300mV
	4N25A(SHORT,F)	Toshiba Semiconductor and Storage	240	3 days	-	OPTOISO 2.5KV TRANS W/BASE 6DIP MOQ: 1 MPQ: 1	OPTOISO 2.5KV TRANS W/BASE 6DIP	Tube	1	-55°C ~ 100°C	6-DIP (0.300"，7.62mm)	6-DIP	Through Hole	Transistor with Base	100mA	2μs，200μs	30V	2500Vrms	1.15V	80mA	20% @ 10mA	-	-	500mV
	TLP331(F)	Toshiba Semiconductor and Storage	123	3 days	-	OPTOISO 5KV TRANS W/BASE 6DIP MOQ: 1 MPQ: 1	OPTOISO 5KV TRANS W/BASE 6DIP	Tube	1	-55°C ~ 100°C	6-DIP (0.300"，7.62mm)	6-DIP	Through Hole	Transistor with Base	50mA	8μs，8μs	55V	5000Vrms	1.15V	50mA	100% @ 1mA	1200% @ 1mA	10μs，8μs	400mV
	TLP185(GB-TPR,E)	Toshiba Semiconductor and Storage	Inquiry	-	-	OPTOISO 3.75KV TRANS 6-SO 4 LEAD MOQ: 1 MPQ: 1	OPTOISO 3.75KV TRANS 6-SO 4 LEAD	Tape & Reel (TR)	1	-55°C ~ 110°C	6-SOIC (0.179"，4.55mm Width)，4 Leads	6-SO，4 Lead	Surface Mount	Transistor	50mA	5μs，9μs	80V	3750Vrms	1.25V	50mA	100% @ 5mA	400% @ 5mA	9μs，9μs	300mV
	TLP185(GB-TPR,E)	Toshiba Semiconductor and Storage	Inquiry	-	-	OPTOISO 3.75KV TRANS 6-SO 4 LEAD MOQ: 1 MPQ: 1	OPTOISO 3.75KV TRANS 6-SO 4 LEAD	Cut Tape (CT)	1	-55°C ~ 110°C	6-SOIC (0.179"，4.55mm Width)，4 Leads	6-SO，4 Lead	Surface Mount	Transistor	50mA	5μs，9μs	80V	3750Vrms	1.25V	50mA	100% @ 5mA	400% @ 5mA	9μs，9μs	300mV
	TLP185(GB-TPR,E)	Toshiba Semiconductor and Storage	Inquiry	-	-	OPTOISO 3.75KV TRANS 6-SO 4 LEAD MOQ: 1 MPQ: 1	OPTOISO 3.75KV TRANS 6-SO 4 LEAD	-	1	-55°C ~ 110°C	6-SOIC (0.179"，4.55mm Width)，4 Leads	6-SO，4 Lead	Surface Mount	Transistor	50mA	5μs，9μs	80V	3750Vrms	1.25V	50mA	100% @ 5mA	400% @ 5mA	9μs，9μs	300mV
	TLP185(GR-TPR,E)	Toshiba Semiconductor and Storage	Inquiry	-	-	OPTOISO 3.75KV TRANS 6-SO 4 LEAD MOQ: 1 MPQ: 1	OPTOISO 3.75KV TRANS 6-SO 4 LEAD	Tape & Reel (TR)	1	-55°C ~ 110°C	6-SOIC (0.179"，4.55mm Width)，4 Leads	6-SO，4 Lead	Surface Mount	Transistor	50mA	5μs，9μs	80V	3750Vrms	1.25V	50mA	100% @ 5mA	300% @ 5mA	9μs，9μs	300mV
	TLP185(GR-TPR,E)	Toshiba Semiconductor and Storage	Inquiry	-	-	OPTOISO 3.75KV TRANS 6-SO 4 LEAD MOQ: 1 MPQ: 1	OPTOISO 3.75KV TRANS 6-SO 4 LEAD	Cut Tape (CT)	1	-55°C ~ 110°C	6-SOIC (0.179"，4.55mm Width)，4 Leads	6-SO，4 Lead	Surface Mount	Transistor	50mA	5μs，9μs	80V	3750Vrms	1.25V	50mA	100% @ 5mA	300% @ 5mA	9μs，9μs	300mV
	TLP185(GR-TPR,E)	Toshiba Semiconductor and Storage	Inquiry	-	-	OPTOISO 3.75KV TRANS 6-SO 4 LEAD MOQ: 1 MPQ: 1	OPTOISO 3.75KV TRANS 6-SO 4 LEAD	-	1	-55°C ~ 110°C	6-SOIC (0.179"，4.55mm Width)，4 Leads	6-SO，4 Lead	Surface Mount	Transistor	50mA	5μs，9μs	80V	3750Vrms	1.25V	50mA	100% @ 5mA	300% @ 5mA	9μs，9μs	300mV
	TLP185(E)	Toshiba Semiconductor and Storage	Inquiry	-	-	OPTOISO 3.75KV TRANS 6-SO 4 LEAD MOQ: 1 MPQ: 1	OPTOISO 3.75KV TRANS 6-SO 4 LEAD	Tube	1	-55°C ~ 110°C	6-SOIC (0.179"，4.55mm Width)，4 Leads	6-SO，4 Lead	Surface Mount	Transistor	50mA	5μs，9μs	80V	3750Vrms	1.25V	50mA	50% @ 5mA	400% @ 5mA	9μs，9μs	300mV
	TLP185(GB,E)	Toshiba Semiconductor and Storage	Inquiry	-	-	OPTOISO 3.75KV TRANS 6-SO 4 LEAD MOQ: 1 MPQ: 1	OPTOISO 3.75KV TRANS 6-SO 4 LEAD	Tube	1	-55°C ~ 110°C	6-SOIC (0.179"，4.55mm Width)，4 Leads	6-SO，4 Lead	Surface Mount	Transistor	50mA	5μs，9μs	80V	3750Vrms	1.25V	50mA	100% @ 5mA	400% @ 5mA	9μs，9μs	300mV
	TLP185(GR,E)	Toshiba Semiconductor and Storage	Inquiry	-	-	OPTOISO 3.75KV TRANS 6-SO 4 LEAD MOQ: 1 MPQ: 1	OPTOISO 3.75KV TRANS 6-SO 4 LEAD	Tube	1	-55°C ~ 110°C	6-SOIC (0.179"，4.55mm Width)，4 Leads	6-SO，4 Lead	Surface Mount	Transistor	50mA	5μs，9μs	80V	3750Vrms	1.25V	50mA	100% @ 5mA	300% @ 5mA	9μs，9μs	300mV
	4N26(SHORT,F)	Toshiba Semiconductor and Storage	Inquiry	-	-	OPTOISO 2.5KV TRANS W/BASE 6DIP MOQ: 1 MPQ: 1	OPTOISO 2.5KV TRANS W/BASE 6DIP	Tube	1	-55°C ~ 100°C	6-DIP (0.300"，7.62mm)	6-DIP	Through Hole	Transistor with Base	100mA	2μs，200μs	30V	2500Vrms	1.15V	80mA	20% @ 10mA	-	-	500mV
	4N38(SHORT,F)	Toshiba Semiconductor and Storage	Inquiry	-	-	OPTOISO 2.5KV TRANS W/BASE 6DIP MOQ: 1 MPQ: 1	OPTOISO 2.5KV TRANS W/BASE 6DIP	Tube	1	-55°C ~ 100°C	6-DIP (0.300"，7.62mm)	6-DIP	Through Hole	Transistor with Base	100mA	-	80V	2500Vrms	1.15V	80mA	10% @ 10mA	-	3μs，3μs	1V
	TLP291(E)	Toshiba Semiconductor and Storage	16	3 days	-	OPTOISOLATOR 3.75KV TRANS 4-SO MOQ: 1 MPQ: 1	OPTOISOLATOR 3.75KV TRANS 4-SO	Bulk	1	-55°C ~ 110°C	4-SOIC (0.179"，4.55mm Width)	4-SO	Surface Mount	Transistor	50mA	4μs，7μs	80V	3750Vrms	1.25V	50mA	50% @ 5mA	400% @ 5mA	7μs，7μs	300mV
	TLP291(TP,E)	Toshiba Semiconductor and Storage	Inquiry	-	-	OPTOISOLATOR 3.75KV TRANS 4-SO MOQ: 1 MPQ: 1	OPTOISOLATOR 3.75KV TRANS 4-SO	Tape & Reel (TR)	1	-55°C ~ 110°C	4-SOIC (0.179"，4.55mm Width)	4-SO	Surface Mount	Transistor	50mA	4μs，7μs	80V	3750Vrms	1.25V	50mA	50% @ 5mA	400% @ 5mA	7μs，7μs	300mV
	TLP291(TP,E)	Toshiba Semiconductor and Storage	7	3 days	-	OPTOISOLATOR 3.75KV TRANS 4-SO MOQ: 1 MPQ: 1	OPTOISOLATOR 3.75KV TRANS 4-SO	Cut Tape (CT)	1	-55°C ~ 110°C	4-SOIC (0.179"，4.55mm Width)	4-SO	Surface Mount	Transistor	50mA	4μs，7μs	80V	3750Vrms	1.25V	50mA	50% @ 5mA	400% @ 5mA	7μs，7μs	300mV

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