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Discover 603 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Operating Temperature Package / Case Input Type Output Type Current - Output / Channel Voltage - Output (Max) Voltage - Isolation Voltage - Forward (Vf) (Typ) Current - DC Forward (If) (Max) Current Transfer Ratio (Min) Current Transfer Ratio (Max) Turn On / Turn Off Time (Typ) Vce Saturation (Max)
4N33M
ON Semiconductor
29,295
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV DARL W/BASE 6DIP
-40°C ~ 100°C 6-DIP (0.300",7.62mm) DC Darlington with Base 150mA 30V 4170Vrms 1.2V 80mA 500% @ 10mA - 5μs,100μs (Max) 1V
4N35
Vishay Semiconductor Opto Division
6,933
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 5KV TRANS W/BASE 6DIP
-55°C ~ 100°C 6-DIP (0.300",7.62mm) DC Transistor with Base 50mA 70V 5000Vrms 1.3V 50mA 100% @ 10mA - 10μs,10μs -
4N36
Vishay Semiconductor Opto Division
5,182
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 5KV TRANS W/BASE 6DIP
-55°C ~ 100°C 6-DIP (0.300",7.62mm) DC Transistor with Base 50mA 30V 5000Vrms 1.3V 50mA 100% @ 10mA - 10μs,10μs -
4N37
Vishay Semiconductor Opto Division
1,854
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 5KV TRANS W/BASE 6DIP
-55°C ~ 100°C 6-DIP (0.300",7.62mm) DC Transistor with Base 50mA 30V 5000Vrms 1.3V 50mA 100% @ 10mA - 10μs,10μs -
4N32
Vishay Semiconductor Opto Division
5,419
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 5.3KV DARL W/BASE 6DIP
-55°C ~ 100°C 6-DIP (0.300",7.62mm) DC Darlington with Base 100mA 30V 5300Vrms 1.25V 60mA 500% @ 10mA - 5μs,100μs (Max) 1V (Typ)
4N33
Vishay Semiconductor Opto Division
1,773
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 5.3KV DARL W/BASE 6DIP
-55°C ~ 100°C 6-DIP (0.300",7.62mm) DC Darlington with Base 100mA 30V 5300Vrms 1.25V 60mA 500% @ 10mA - 5μs,100μs (Max) 1V (Typ)
4N25M
ON Semiconductor
11,124
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C 6-DIP (0.300",7.62mm) DC Transistor with Base - 30V 4170Vrms 1.18V 60mA 20% @ 10mA - 2μs,2μs 500mV
4N37M
ON Semiconductor
9,143
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C 6-DIP (0.300",7.62mm) DC Transistor with Base - 30V 4170Vrms 1.18V 60mA 100% @ 10mA - 2μs,2μs 300mV
4N35M
ON Semiconductor
4,993
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C 6-DIP (0.300",7.62mm) DC Transistor with Base - 30V 4170Vrms 1.18V 60mA 100% @ 10mA - 2μs,2μs 300mV
4N26M
ON Semiconductor
4,560
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C 6-DIP (0.300",7.62mm) DC Transistor with Base - 30V 4170Vrms 1.18V 60mA 20% @ 10mA - 2μs,2μs 500mV
4N36M
ON Semiconductor
3,191
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C 6-DIP (0.300",7.62mm) DC Transistor with Base - 30V 4170Vrms 1.18V 60mA 100% @ 10mA - 2μs,2μs 300mV
4N29M
ON Semiconductor
5,155
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV DARL W/BASE 6DIP
-40°C ~ 100°C 6-DIP (0.300",7.62mm) DC Darlington with Base 150mA 30V 4170Vrms 1.2V 80mA 100% @ 10mA - 5μs,40μs (Max) 1V
4N32M
ON Semiconductor
3,995
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV DARL W/BASE 6DIP
-40°C ~ 100°C 6-DIP (0.300",7.62mm) DC Darlington with Base 150mA 30V 4170Vrms 1.2V 80mA 500% @ 10mA - 5μs,100μs (Max) 1V
4N30M
ON Semiconductor
1,832
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV DARL W/BASE 6DIP
-40°C ~ 100°C 6-DIP (0.300",7.62mm) DC Darlington with Base 150mA 30V 4170Vrms 1.2V 80mA 100% @ 10mA - 5μs,40μs (Max) 1V
MOC8050M
ON Semiconductor
10,112
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV DARLINGTON 6DIP
-40°C ~ 100°C 6-DIP (0.300",7.62mm) DC Darlington 150mA 80V 4170Vrms 1.18V 60mA 500% @ 10mA - 8.5μs,95μs -
H11A1
Vishay Semiconductor Opto Division
1,999
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 5.3KV TRANS W/BASE 6DIP
-55°C ~ 100°C 6-DIP (0.300",7.62mm) DC Transistor with Base 50mA 70V 5300Vrms 1.1V 60mA 50% @ 10mA - 3μs,3μs 400mV
MOC8021M
ON Semiconductor
9,528
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV DARLINGTON 6DIP
-40°C ~ 100°C 6-DIP (0.300",7.62mm) DC Darlington 150mA 50V 4170Vrms 1.18V 60mA 1000% @ 10mA - 8.5μs,95μs -
H11D1
Lite-On Inc.
4,701
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 5KV TRANS W/BASE 6DIP
-55°C ~ 100°C 6-DIP (0.300",7.62mm) DC Transistor with Base 100mA 300V 5000Vrms 1.2V 60mA 20% @ 10mA - 5μs,5μs 400mV
H11AA1M
ON Semiconductor
3,550
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C 6-DIP (0.300",7.62mm) AC,DC Transistor with Base 50mA 30V 4170Vrms 1.17V 60mA 20% @ 10mA - - 400mV
H11AA4M
ON Semiconductor
2,836
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C 6-DIP (0.300",7.62mm) AC,DC Transistor with Base 50mA 30V 4170Vrms 1.17V 60mA 100% @ 10mA - - 400mV