Input Type:
Current - Output / Channel:
Current - DC Forward (If) (Max):
Discover 272 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Operating Temperature Input Type Output Type Current - Output / Channel Rise / Fall Time (Typ) Voltage - Output (Max) Voltage - Isolation Voltage - Forward (Vf) (Typ) Current - DC Forward (If) (Max) Current Transfer Ratio (Min) Turn On / Turn Off Time (Typ) Vce Saturation (Max)
4N35TVM
ON Semiconductor
3,612
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C DC Transistor with Base - - 30V 4170Vrms 1.18V 60mA 100% @ 10mA 2μs,2μs 300mV
4N35-X006
Vishay Semiconductor Opto Division
9,249
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 5KV TRANS W/BASE 6DIP
-55°C ~ 100°C DC Transistor with Base 50mA - 30V 5000Vrms 1.2V 60mA 100% @ 10mA 10μs,10μs -
CQY80NG
Vishay Semiconductor Opto Division
2,060
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 5KV TRANS W/BASE 6DIP
-55°C ~ 100°C DC Transistor with Base 50mA 7μs,6.7μs 32V 5000Vrms 1.25V 60mA 50% @ 10mA 11μs,7μs 300mV
4N33TVM
ON Semiconductor
1,071
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV DARL W/BASE 6DIP
-40°C ~ 100°C DC Darlington with Base 150mA - 30V 4170Vrms 1.2V 80mA 500% @ 10mA 5μs,100μs (Max) 1V
4N38TVM
ON Semiconductor
1,023
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C DC Transistor with Base 100mA - 80V 4170Vrms 1.15V 80mA 20% @ 10mA 5μs,5μs 1V
H11G2TVM
ON Semiconductor
2,975
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV DARL W/BASE 6DIP
-40°C ~ 100°C DC Darlington with Base - - 80V 4170Vrms 1.3V 60mA 1000% @ 10mA 5μs,100μs 1V
4N25TVM
ON Semiconductor
255
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C DC Transistor with Base - - 30V 4170Vrms 1.18V 60mA 20% @ 10mA 2μs,2μs 500mV
H11A1TVM
ON Semiconductor
912
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C DC Transistor with Base - - 30V 4170Vrms 1.18V 60mA 50% @ 10mA 2μs,2μs 400mV
4N28TVM
ON Semiconductor
791
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C DC Transistor with Base - - 30V 4170Vrms 1.18V 60mA 10% @ 10mA 2μs,2μs 500mV
H11AA1TVM
ON Semiconductor
503
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C AC,DC Transistor with Base 50mA - 30V 4170Vrms 1.17V 60mA 20% @ 10mA - 400mV
H11AA4TVM
ON Semiconductor
840
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C AC,DC Transistor with Base 50mA - 30V 4170Vrms 1.17V 60mA 100% @ 10mA - 400mV
H11AG1TVM
ON Semiconductor
975
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C DC Transistor with Base 50mA - 30V 4170Vrms 1.25V 50mA 100% @ 1mA 5μs,5μs 400mV
MCT5211TVM
ON Semiconductor
998
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C DC Transistor with Base 150mA - 30V 4170Vrms 1.25V 50mA 150% @ 1.6mA 14μs,2.5μs 400mV
4N37TVM
ON Semiconductor
76
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV TRANS W/BASE 6DIP
-40°C ~ 100°C DC Transistor with Base - - 30V 4170Vrms 1.18V 60mA 100% @ 10mA 2μs,2μs 300mV
4N32TVM
ON Semiconductor
28
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 4.17KV DARL W/BASE 6DIP
-40°C ~ 100°C DC Darlington with Base 150mA - 30V 4170Vrms 1.2V 80mA 500% @ 10mA 5μs,100μs (Max) 1V
4N25M
Lite-On Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
OPTOISO 2.5KV TRANS W/BASE 6DIP
-55°C ~ 100°C DC Transistor with Base 100mA 3μs,3μs 30V 2500Vrms 1.2V 80mA 20% @ 10mA - 500mV
4N26M
Lite-On Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
OPTOISO 1.5KV TRANS W/BASE 6DIP
-55°C ~ 100°C DC Transistor with Base 100mA 3μs,3μs 30V 1500Vrms 1.2V 80mA 20% @ 10mA - 500mV
4N27M
Lite-On Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
OPTOISO 1.5KV TRANS W/BASE 6DIP
-55°C ~ 100°C DC Transistor with Base 100mA 3μs,3μs 30V 1500Vrms 1.2V 80mA 10% @ 10mA - 500mV
4N28M
Lite-On Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
OPTOISO .5KV TRANS W/BASE 6DIP
-55°C ~ 100°C DC Transistor with Base 100mA 3μs,3μs 30V 500Vrms 1.2V 80mA 10% @ 10mA - 500mV
4N35M
Lite-On Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
OPTOISO 3.55KV TRANS W/BASE 6DIP
-55°C ~ 100°C DC Transistor with Base 100mA 3μs,3μs 30V 3550Vrms 1.2V 60mA 100% @ 10mA - 300mV